i / , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn rf transistor MMBR920L description ? low noise nf= 2.4db typ. @ f= 500mhz ? high gain gpe= 15db typ. @ f= 500mhz applications ? designed for thick and thin-film circuits using surface mount components and requiring low-noise , high-gain signal amp- lification at frequencies to 1 ghz. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc= 25'c junction temperature storage temperature range value 20 15 3 35 0.35 150 -55-150 unit v v v ma w ?c ?c i ^ h,h* ?-?iii marking lj! j u- kh / \ n) c_ dim a b c d c- h k l m sot- 2 3 package j b c ii ^j h- 2 : emitter 3: collector -|l mm min 0.37 1.19 2.10 0. 39 1.7s 2.65 1. 10 0. ib 0.076 max 0.31 1. 10 2.30 1.05 2.05 3. 05 1.30 0.61 0. 17s u nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor MMBR920L electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo icbo hfe cob ft nf nf gpe gpe parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cutoff current dc current gain output capacitance current-gain?bandwidth product noise figure noise figure common-emitter amplifier power gain common-emitter amplifier power gain conditions lc=1ma;lb=0 lc= 0.1ma; ie=0 l6=0.1ma;lc=0 vcb=10v; ie=0 lc=14ma;vce=10v |e=0;vcb=10v;f= 1mhz lc= 14ma ; vce= 10v; f= o.sghz lc= 2ma ; vce= 10v; f= o.sghz lc=2ma;vce=10v;f=1ghz lc= 2ma ; vce= 10v; f= o.sghz lc=2ma;vce=10v;f=1ghz min 15 20 2 25 typ. 4.5 2.4 3.0 15 10 max 50 250 1.0 unit v v v na pf ghz db db db db
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